Selection of candidate doped graphite materials as plasma facing components for HT-7U device

作者: Q.G Guo , J.G Li , N Noda , Y Kubota , J.L Chen

DOI: 10.1016/S0022-3115(02)01399-5

关键词:

摘要: Selection of candidate materials for plasma facing material (PFM) in HT-7U device and plasma–wall interactions are critically important to reach high performance. Based on concentrated research multi-element doped graphite containing B, Si Ti, two kinds graphites have been chosen as candidates PFM HT-7U. Doped GBST1308 with the dopant concentration 1% 2.5% Si, 7.5% Ti was developed low-Z reducing chemical sputtering suppressing radiation enhanced sublimation, successfully used new limiter last campaigns HT-7 tokamak experiments. composition has improved mechanical properties thermal conductivity 314 W/m K at room temperature. TDS heat flux experiments results demonstrated that such promising components 2003 Elsevier Science B.V. All rights reserved.

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