Investigation of Surface Passivation Effect of a-SiNx:H on a-Si:H by Photothermal Deflection Spectroscopy
作者： Ikurou Umezu , Michio Daigo , Keiji Maeda
DOI: 10.1143/JJAP.33.L873
关键词:
摘要: Optical absorption of surface- and interface-states in a-Si:H a-SiNx :H (x=1.2 1.7) films was measured by photothermal deflection spectroscopy. The surface-state reduced passivation the a-SiN1.7:H or a-SiN1.2:H layer. surface absorptions are lower than that a-Si:H. origin free discussed terms native oxide
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ipap.jp参考文章(3)
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