INTERFACIAL REACTION IN THE SPUTTER-DEPOSITED SIO2/TI0.1W0.9 ANTIFUSE SYSTEM
作者： Jong Tae Baek , Hyung‐Ho Park , Kyung‐Ik Cho , Hyung Joun Yoo , Sang Won Kang
DOI: 10.1063/1.360413
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摘要: The effects of annealing temperature on the interfacial reactions and antifuse I‐V characteristics ultra thin SiO2 layer deposited Ti0.1W0.9 substrate were investigated. analyzed using x‐ray photoelectron spectroscopy Auger electron with sample which is in situ annealed under high vacuum or ex a nitrogen atmosphere. surface was oxidized during sputter deposition layer. Ti, W oxides consist Ti2O3 (Ti3O5), TiO2, WO2, WO3. WO3 decomposed into metallic Ti at 400 500 °C, respectively. breakdown voltage decreased as increased, due to thinning dielectric resulted from decomposition formation Ti. Annealing 600 °C caused reaction between (Ti,W) formed elemental silicon layer, where completely los...
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