Quantitative defect etching of GaAs on Si: Is it possible?
作者： D. J. Stirland
DOI: 10.1063/1.100211
关键词:
摘要: The Wright etch [M. W. Jenkins, J. Electrochem. Soc. 124, 757 (1977)], hitherto used to reveal defects in silicon, has been examined as a defect etchant for GaAs epitaxial layers on silicon. Various calibration techniques, including transmission electron microscopy of etched layers, have establish that features correspond with dislocations. Problems involved direct comparisons densities measured by different methods are discussed.
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