Thermal conduction in metalized tetrahedral amorphous carbon (ta C) films on silicon

摘要: Abstract Thermal conductivities of filtered cathodic vacuum arc (FCVA) deposited tetrahedral amorphous carbon films, ranging from 20 to 100 nm, are measured using pulsed photothermal reflectance technique. The internal thermal conductivity the film is 4.7 W/m K. No size effect observed. boundary resistance between with gold and silicon 1.9×10 −8 m 2 K/W, which suggest good contact achieved. Our measurement technique calibrated by measuring silicon-dioxide films’ conductivities. Internal about four times higher than silicon-dioxide's conductivity.