Spin-coated Cu2CrSnS4 thin film: A potential candidate for thin film solar cells

摘要: Abstract In this regard for the first time, multicomponent chalcogenide Cu2(Zn1-xCrx)SnS4 (CZCrTS) nanocrystals at (0 ≤x ≤ 1) were synthesized by solvothermal method. Improvement of structural, optical and electrical properties in Cr-doped Cu2ZnSnS4 thin film deposited on SLG substrate spin coating technique has been investigated. It was observed that introduced Cr element into nanocrystal led to increasing disorder cations distribution within unit cell through tensile strain inside resulting a decline volume accompanied decrease particle size also crystallite size. found band gap CZCrTS ranges from 1.54 1.35 eV with partial substitution Zn which turn significant improvement crystallinity film, facilitates grain growth increases where process post-sulfurization 450 ℃ 30 min. addition, it number grains Cu2CrSnS4 (x = 1), 2.79 (nm−2), lower than that, 6.8 (nm−2) film. Also, dislocation density 0.012 0.024 resulted decreased defects boundaries current 0.34 mA 0.42 mA Due higher absorption coefficient (>104 cm−1), conductivity (> 23 *1012 S−1) transmittance have reported we believe may be good candidate can used as an absorbent layer sunlight solar cell.