Cells including at least one fin field effect transistor and semiconductor integrated circuits including the same
作者： Sang-hoon Baek , Sang-Kyu Oh
DOI:
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摘要: A semiconductor integrated circuit (IC) may comprise at least one cell comprising fin field-effect transistor (FET). The a plurality of fins that extend in first direction and are arranged parallel to each other second is perpendicular the direction. size correspond number pitch fins.
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