CVD processing chamber

摘要: A process chamber is disclosed which provides a 360° circular gas/vacuum distribution over substrate being processed. The processed supported on heated and optionally cooled pedestal assembly. faces one-piece gas faceplate connected to an RF power supply outside the vacuum environment of processing chamber. pumping channel view port provided verify confirm instrumentation readings concerning degree surface deposition internal surfaces. All wall surfaces facing region where plasma will be present during (except faceplate) are ceramic therefore highly resistant corrosion. un-anodized metal also covered with loosely fitting having alignment features maintain concentricity between wafer support valve body contained within helping reduce area available for condensation volatile constituents condense or cool in passage can contaminate if allowed migrate back it through piping.