The deposition and microstructure of amorphous tungsten oxide films by sputtering

摘要: Abstract Amorphous tungsten oxide film under different oxygen flow rates were deposited by direct current sputtering. The deposition process was monitored the Langmuir probe and optical emission spectrometer. From voltage change at target all plasma parameters, films low rate (5 sccm) are metal-rich oxides. completely oxidized higher (10–20 sccm). color of is also changed from dark blue to transparent accordingly. We analyzed XRD, SEM, EDS XPS confirmed that compositions films. More interestingly, reveals existence inter-valance state W5+ in sample besides commonly recognized W6+ W4+ states. This may be accredited incomplete bonding between due amorphous structures examined UV–Vis–NIR spectroscopy indicates band gap widened absorbance reduced for high rate. These results together indicate WO3 with full easier chemical insertion electrons ions achieve better electrochromic functions.