Dielectric breakdown in magnetic tunnel junctions having an ultrathin barrier
作者： Bryan Oliver , Qing He , Xuefei Tang , J. Nowak
DOI: 10.1063/1.1459608
关键词:
摘要: Magnetic tunnel junctions have been fabricated by magnetron sputtering and patterned deep ultraviolet photolithography. The magnetoresistance was 15%–22% resistance times area product (R×A) 7–22 Ω μm2 for having 4.75–5.5-A-thick Al layer oxidized naturally. Two types of breakdown were observed: abrupt dielectric at an effective field 10 MV/cm determined the thickness barrier, a gradual related to defects in barrier. After metallic pinhole is created, size which depends on maximum current applied junction. flowing through creates strong circular magnetic that curls local magnetization free around pinhole. subsequent free-layer reversal very sensitive location. electric properties after can be well described Ohmic resistor magnetoresistor connected parallel.
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