作者: K. Palanjyan , R. Vallée , T. Galstian
DOI: 10.1364/OME.5.001122
关键词:
摘要: Photoinduced birefringence (PIB) is studied in thin films of Ge25As30S45 glass prepared by e-beam evaporation technique. Excitation the material done air at 514.5 nm and PIB monitored with a He-Ne laser 632.8nm (incident from same side). Based on obtained experimental results, we show that local value this can reach ≈0.11, which is, to best our knowledge, highest ever reported literature.