Infrared diode laser spectroscopy of the fundamental band of AsH(X 3Σ
作者： J.R. Anacona , P.B. Davies , S.A. Johnson
DOI: 10.1080/00268978500102841
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摘要: Many vibration-rotation absorption lines assigned to the AsH radical in its X 3Σ- state have been detected using infrared diode laser spectroscopy. The accurately measured positions of 23 fundamental band, combined with L.M.R. results for ground vibrational state, yield a band centre 2076·874(28) cm-1. Fitted parameters (cm-1 derived υ = 1 level are: B, 6·98918(99); D, 3·247(73) × 10-4; λ, 58·861(15); ƒ, -0·2573(21).
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