Interface-controlled growth of organic semiconductors on graphene
作者： Jinta Mathew , Saim Emin , Egon Pavlica , Matjaž Valant , Gvido Bratina
DOI: 10.1016/J.SUSC.2017.05.005
关键词:
摘要: Abstract We have studied submonolayer coverages of N,N-1H,1H-perfluorobutyl dicyanoperylenecarboxydiimide (PDIF-CN2) on mechanically exfoliated graphene transferred onto SiO 2 substrates. Our atomic force microscopy (AFM) data show that PDIF-CN2 forms irregularly-shaped 1.4 nm-high islands. From the selected area diffraction performed with transmission electron microscope (TEM) we conclude this height corresponds to π − stacks molecules, which are inclined for 43° relative surface. AFM also showed complete absence single-layer (SLG). Electric revealed a marked difference in surface charge density between and bilayer graphene, higher SLG than graphene. associate behavior p type doping due electrostatic dipole induced by molecular water layer present at graphene/SiO interface. The crucial role interface determining growth was further confirmed TEM examination deposited unsupported SLG.
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