ZnO metal-semiconductor-metal ultraviolet sensors with various contact electrodes
作者： Sheng-Joue Young , Liang-Wen Ji , Shoou-Jinn Chang , Yan-Kuin Su
DOI: 10.1016/J.JCRYSGRO.2006.03.059
关键词:
摘要: Abstract ZnO epitaxial films were grown on sapphire (0 0 0 1) substrates by using RF plasma-assisted molecular beam epitaxy. Metal–semiconductor–metal (MSM) sensors with Ag, Pd and Ni contact electrodes then fabricated. It was found that barrier height at Ag/ZnO, Pd/ZnO Ni/ZnO interfaces 0.736, 0.701 0.613 eV, respectively. With an incident wavelength of 370 nm 1 V applied bias, the maximum responsivity Ag/ZnO/Ag, Pd/ZnO/Pd Ni/ZnO/Ni MSM respectively 0.066, 0.051 0.09 A/W, which corresponds to quantum efficiency 17.3%, 11.4% 23.8%. For a given bandwidth 100 Hz noise equivalent power fabricated estimated be 6.8×10 −13 , 1.13×10 −12 6.4×10 W, corresponding normalized detectivity ( D * ) 1.04×10 12 6.25×10 11 1.1×10 cm Hz 0.5 W −1 .
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