Structural, optical and electrical properties of Cu2FeSnX4 (X = S, Se) thin films prepared by chemical spray pyrolysis
作者： Dhruba B. Khadka , JunHo Kim
DOI: 10.1016/J.JALLCOM.2015.03.053
关键词:
摘要: Abstract We report on fabrication of polycrystalline Cu 2 FeSnX 4 (X = S, Se) thin films by chemical spray pyrolysis subsequent with post-sulfurization and selenization. The post-annealing as-sprayed FeSnS (CFTS) in sulfur selenium ambient demonstrated drastically improved surface texture as well crystallinity. crystal lattice parameters calculated from X-ray diffraction patterns for post-annealed were found to be consistent stannite structure. fabricated FeSnSe (CFTSe) showed p-type conductivity carrier concentration the range 10 21 cm −3 mobility ∼1–5 cm V −1 s . band gap energies post-sulfurized CFTS post-selenized CFTSe estimated ∼1.37 eV ∼1.11 eV an error ±0.02 eV UV–Vis absorption, respectively, which are promising photovoltaic application.
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