HOLE CAPTURE IN BORON-DOPED DIAMOND

摘要: A carrier capture model based on the work of Lax [Phys. Rev. 119, 1502 (1960)] and Gibb et al. [Philos. Mag. 36, 1021 (1977)] is applied to diamond. This accounts for lower activation energy boron in diamond measured using deep level transient spectroscopy (DLTS) techniques. The assumes that when a valence band captured by an impurity, it occupies highest acceptor excited state then quickly funneled lowest level. At trapped hole either thermalizes back or reaches ground impurity via ‘‘slow’’ multiphonon decay. Using this kinetic picture, previously reported DLTS results are shown be consistent with parameters These will interest researchers simulating device properties indication influence spectrum electrical boron‐...