作者: W. Omer , D. Salem , A. Mohra , E. Hashish
DOI: 10.1109/MWSCAS.2003.1562506
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摘要: The five-port annular junction is solved using field theory analysis with the aid of finite elements method. Novel model for fringing fields presented. Fields distributions and scattering matrices are obtained. Two microstrip junctions simulated IE3D, realized measured S-parameters found to be in good agreement theoretical ones.