Reducing VBE wafer spread of bipolar transistor via a compensation circuit
作者： R. Amador , A. Polanco , H. Hernández , E. González , A. Nagy
DOI: 10.1049/EL:19920876
关键词:
摘要: A circuit which reduces the V/sub BE/ wafer spread of a standard bipolar transistor in linear ICs is described. This compensation takes advantage close correlation between I/sub s/ and beta r. The major source output error IC temperature sensors with intrinsic reference, thereby require resistive trimming.
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sci-hub.se 参考文章(6)
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