Friction forces on hydrogen passivated (110) silicon and silicon dioxide studied by scanning force microscopy

摘要: Scanning force microscopy (SFM) was used to study the surface topography and low load, small contact area frictional behavior of hydrogen passivated (H‐terminated) silicon dioxide in a dry nitrogen atmosphere. The unpassivated samples showed no significant contrast sliding SFM tip between thermally grown native that typically covers exposed surfaces. H‐termination sample leads an increase friction by factor 2 on silicon, whereas is not influenced. Coefficients were determined using two‐dimensional histogram technique. On SiO2 and H‐terminated Si surfaces, standard Si3N4 tips, coefficients be 0.3±0.1 0.6±0.1, respectively.