On the conflicting roles of ionizing radiation in ceramics

摘要: Abstract Ionizing radiation can produce competing effects in ceramic materials. It is well established that ionizing displacement damage via radiolysis alkali halides and some other ceramics. At high stopping powers (electronic d E /d x >5–50 keV/nm, depending on the material), additional inelastic collision processes also be created vicinity of ion track (swift-heavy-ion damage). On hand, promote recovery many insulators by enhancing mobility point defects (ionization-induced diffusion). Therefore, under different irradiation conditions powers), lead to either a substantial enhancement or suppression resistance The microstructures SiC, Al 2 O 3 , MgO, MgAl 4 Si N AlN were examined transmission electron microscopy (TEM) following with beams ranging from 1 MeV H + 710 Bi . oxides found susceptible ionization-induced diffusion. In these materials, fluxes produced coarsening dislocation loops cavities, inhibited low-temperature amorphization. electronic powers, was tracks could not attributed normal elastic processes. amorphous diameter associated 3.5 nm. SiC resistant swift-heavy-ion-track up 34 keV/nm.