Ferroelectric transistor model based on self-consistent solution of 2D Poisson's, non-equilibrium Green's function and multi-domain Landau Khalatnikov equations

摘要: We present a physics-based model for ferroelectric/negative capacitance transistors (FEFETs/ NCFETs) without an inter-layer metal between ferroelectric and dielectric in the gate stack. The self-consistently solves 2D Poisson's equation, non-equilibrium Green's function (NEGF) based charge transport equations, multi-domain Landau Khalatnikov (LK) equations with domain interaction term. proposed simulation framework captures variation of (FE) polarization (P) along length due to non-uniform electric field (E) channel. To calibrate LK we fabricate characterize 10nm HZO films. Based on calibrated model, analyze gate/drain voltage dependence P distribution FE its effect channel potential current-voltage characteristics. Our results highlight importance larger boost benefits FEFETs subthreshold swing (SS) as small ∼50mV/decade achieved at room temperature. As increases, characteristics (SS, negative drain induced barrier lowering (DIBL), output conductance) approach those metal.