Analytical modeling of polarization effects in InGaN double hetero-junction p-i-n solar cells
作者： Rabeb Belghouthi , Jean Paul Salvestrini , Mohamed Hichem Gazzeh , Christyves Chevallier , None
DOI: 10.1016/J.SPMI.2016.09.016
关键词:
摘要: We propose a new and simple analytical model taking into account of the polarization charge effects in order to assess performance InGaN-based PIN solar cells. The main contribution this study consists derivation expressions both diffusion generation recombination currents take charges. validity is assessed through comparison numerical calculations, using one dimensional self-consistent Schrodinger-Poisson equations previously published theoretical experimental works. shown be good agreement with data. As expected, it that spontaneous piezoelectric polarizations have beneficial effect when InGaN layer grown on N-face GaN/InGaN
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