Crystal Growth of Indium-Doped Czochralski Silicon for Photovoltaic Application
作者： Xuegong Yu , Xue Zheng , Keigo Hoshikawa , Deren Yang
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摘要: In this paper we have investigated the crystal growth of indium-doped Czochralski (CZ) silicon for photovoltaic application. It is found that during CZ evaporation indium rather severe, which makes accurate control desired resistivity in difficult. The rapid doping after melting raw poly-silicon materials has been proposed to reduce evaporation. segregation coefficient verified be 4.0×10-4 by method quenching growth. With an increase concentration, electrical activity dopants become smaller. Beyond a critical cellular generally occurs. These results are interest application solar cells without light-induced degradation photovoltaics.
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