Observation of bistable resistance memory switching in CuO thin films
作者： C. H. Kim , Y. H. Jang , H. J. Hwang , Z. H. Sun , H. B. Moon
DOI: 10.1063/1.3098071
关键词:
摘要: We report a bistable resistance switching behavior of CuO thin films. To understand the mechanism, we have studied impedance spectroscopy and nanoscale electrical property. From frequency-dependent properties films in high (ROFF) low (RON) states, infer formation conducting paths generated by external bias as possible origin states. In addition, observation inhomogeneous path using atomic force microscope is also consistent with our inference.
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