An in situ characterization of the p-indium phosphide-indium/electrolyte contact formed by cathodic corrosion of the semiconductor

摘要: Hydrogen evolution at illuminated p-InP/electrolyte contacts is accompanied by a corrosion reaction leading to indium formation the semiconductor surface. After this process electrode response analyzed in 1 M H{sub 2}SO{sub 4} using current-voltage curves and Mott-Schottky as well impedance spectroscopic measurements. data indicate shift of flat-band potential due In whereas barrier heights surface remain almost constant ({Phi}{beta} {approx} eV). Impedance under photocurrent flow reveal nearly ideal Schottky contact after separation electrochemical charge transfer 17 refs., 4 figs., tab.