Transient and steady-state photoconductivity in a-Si1−xGex:H,F alloys☆

摘要: Abstract Measurements of the transient photoconductivity by time flight (TOF) method in sandwich configuration have been used to determine electron mobility-lifetime (μτ) products r.f. glow discharge a-Si 1−x Ge x :H alloys with 0 ≤ × 0.4. The μτ decrease monotonically x. versus characteristic lies parallel to, but two orders magnitude lower than derived from steady-state data. Similar results are found for fluoride-derived produced same reactor. TOF on these indicate similar those obtained value. This does not corroborate order-of-magnitude improvement photoresponse material. Explanations this observation and also discrepancy between discussed.