Band gap tuning of 1T-MoS2/SiC bilayers with normal strain: A density functional study
作者： M. Luo , Y.E. Xu , Y.X. Song
DOI: 10.1016/J.IJLEO.2017.01.075
关键词:
摘要: Abstract The structure and electronic properties of 1T-MoS2/SiC van der Waals (vdW) bilayer under the influence normal strain have been investigated by first-principles method. Our results reveal that compressive has much on band gap monotonically increases from 0.0 to 0.37 eV. By contrast, a tensile strain, vdW is always zero-gap material also imply electrons are likely transfer 1T-MoS2 SiC monolayer due deeper potential monolayer. variations owing different states Mo, S, C atoms in conduction valence bands. predicted tunable very promising for its use nanodevices.
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