Quantitative analysis of the interplay between InAs quantum dots and wetting layer during the GaAs capping process.

作者: D González , V Braza , A D Utrilla , A Gonzalo , D F Reyes

DOI: 10.1088/1361-6528/AA83E2

关键词:

摘要: A procedure to quantitatively analyse the relationship between wetting layer (WL) and quantum dots (QDs) as a whole in statistical way is proposed. As we will show manuscript, it allows determining, not only proportion of deposited InAs held WL, but also average In content inside QDs. First, amount measured for calibration three different WL structures without QDs by two methodologies: strain mappings high-resolution transmission electron microscopy images compositional with ChemiSTEM x-ray energy spectrometry. The area under profiles obtained both methodologies emerges best parameter quantify agreement diffraction results. Second, effect GaAs capping (CL) growth rates on decomposition evaluated. CL rate has strong influence QD volume well characteristics. Slower produce an enrichment if compared faster ones, together diminution height. addition, assuming that density does change rates, estimation given. high Ga/In intermixing during buried trigger reduction height, above all, higher impoverishment QDs, therefore modifying most important parameters determine optical properties these structures.

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