Reconfigurable van der Waals Heterostructured Devices with Metal–Insulator Transition

摘要: Atomically thin two-dimensional (2D) materials range from semimetallic graphene to insulating hexagonal boron nitride semiconducting transition-metal dichalcogenides. Recently, metal–insulator–semiconductor field effect transistors built these 2D elements were studied for flexible and transparent electronics. However, induce ambipolar characteristics alternative power-efficient circuitry, ion-gel gating is often employed high capacitive coupling, limiting stable operation at ambient conditions. Here, we report reconfigurable MoTe2 optoelectronic with all components, where the device can be reconfigured by both drain gate voltages. Eight different configurations each fixed voltage are spatially resolved scanning photocurrent microscopy. In addition, metal–insulator transitions observed in electron hole carriers under 2 V due strong Coulomb interaction system. Furthermore, vertical tunneling through multiple van der Waals l...