摘要: Abstract This article reviews the passivating effect of arsenic monolayers on various silicon and germanium surfaces. It has been shown that such dramatically reduce reactivity initial The atomic structure nature bonding between As layer Si Ge surfaces are described reasons for passivation effects discussed. Results experimental theoretical investigations As-terminated reviewed compared with same terminated other layers. Finally, As-termination interface formation heteroepitaxy is considered. In particular, stage GaAs growth Si, which dominated by As-passivation substrate,
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