作者: Satoshi Seo , Mitsuaki Osame , Keisuke Miyagawa , Aya Anzai , Shunpei Yamazaki
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摘要: The reliability of an EL element is enhanced while the increase electric power consumption suppressed. It becomes possible that in a SES drive, reverse bias applied to driven at constant current. Moreover, application performed by varying only counter electrode, and thus withstand voltage TFT due gate signal line drive circuit, which problem when changing greatly current supplying line, can be Furthermore, reduction also achieved enhancement secured making smaller than forward bias. number sources suppressed potential common with source circuit or time applied.