Optical and electrical characteristics of layered semiconductor p-InSe doped with Sb

摘要: The impurity levels in Sb-doped p-InSe have been investigated using photoluminescence (PL), Hall effect and optical absorption measurements. emission band at 1.02 eV is observed the PL spectra of samples doped with 0.05 to 0.5 at.% Sb. From dependence excitation intensity peak energy, we find that due transition related a donor-acceptor pair. deep acceptor level located approximately 0.4 above valence detected probably associated defects formed by Sb atoms interlayer.