作者: Govind P Agrawal , Niloy K Dutta , Govind P Agrawal , Niloy K Dutta
DOI: 10.1007/978-1-4613-0481-4_5
关键词:
摘要: Semiconductor lasers operating in the wavelength range of 1.1–1.65 µm can be fabricated using the InGaAsP quaternary material which has been grown lattice-matched on an InP …