Moir\'e and beyond in transition metal dichalcogenide twisted bilayers

摘要: Fabricating van der Waals (vdW) bilayer heterostructures (BL-HS) by stacking the same or different two-dimensional (2D) layers, offers a unique physical system with rich electronic and optical properties. Twist-angle between component layers has emerged as remarkable parameter that can control period of lateral confinement, nature exciton (Coulomb bound electron-hole pair) in reciprocal space thus creating exotic states including moir\'e excitons. In this review article, we focus on opto-electronic properties excitons transition metal dichalcogenide (TMD) semiconductor twisted BL-HS. We look at existing evidence localized strongly correlated states, nanoscale mapping superlattice lattice-reconstruction. This will be helpful guiding community well motivating work areas such near-field measurements controlling creation novel states.