Infrared upconversion in radio frequency magnetron sputtered Er-doped zinc oxide thin films
作者： Pekka T. Neuvonen , Kristian Sigvardt , Sabrina R. Johannsen , Jacques Chevallier , Brian Julsgaard
DOI: 10.1063/1.4868418
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摘要: Upconversion in radio frequency magnetron sputtered Er-doped zinc oxide thin films on Si substrate has been demonstrated using 1550 nm cw laser excitation. As-sputtered did not show any upconversion emission, and annealing was required to optically activate the Er3+-ions. Emissions at 985, 809, 665–675 nm were observed annealed films, corresponding transitions from 4I11∕2, 4I9∕2, 4F9∕2 ground state 4I15∕2, respectively. The emission 4I11∕2 dominant one, whereas 4I9∕2 weakest. highest intensity 985 nm obtained with 2.4 at. % of Er by film 700 °C. Annealing higher temperatures causes diffuse segregate Si-ZnO interface between ZnO film.
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