Solution-processed nickel oxide hole transport layer for highly efficient perovskite-based photovoltaics
作者： Saemon Yoon , Dong-Won Kang
DOI: 10.1016/J.CERAMINT.2018.02.147
关键词:
摘要: Abstract Solution processed NiOx is one of the promising hole transport layer (HTL) for planar perovskite solar cells, which can replace hygroscopic poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT: PSS) HTL. In this study, we investigated effects ethylenediamine (EDA) additive in precursor solution (nickel nitrate hexahydrate dissolved ethyleneglycol) on optoelectronic and surface morphological properties resultant films. By varying EDA content (0–10.0 v/v %) precursor, could find out that adequate (~5.0%) provide much reduced electrical resistivity enhanced optical transmission compared with control film (No EDA) by suppressing formation byproducts (i.e. nickel hydroxide). addition, AFM topography showed compact dense deposition ITO electrode. This contributed to improve charge suppress recombination loss at ITO/perovskite interface, provided strong enhancement fill factor from 0.599 0.714 cells. As a result, power conversion efficiency (PCE) was strongly increased 13.9 16.7% (EDA 5.0%). also outperformed performance (14.3%) device using PEDOT: PSS, indicates HTL offer photovoltaic performance.
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