The dimensional crossover of quantum transport properties in few-layered Bi2Se3 thin films
作者： Liang Yang , Zhenhua Wang , Mingze Li , Xuan P. A. Gao , Zhidong Zhang
DOI: 10.1039/C9NA00036D
关键词:
摘要: Topological insulator bismuth selenide (Bi2Se3) thin films with a thickness of 6.0 quintuple layers (QL) to 23 QL are deposited using pulsed laser deposition (PLD). The arithmetical mean deviation the roughness (Ra) these is less than 0.5 nm, and root square (Rq) 0.6 nm. Two-dimensional localization weak antilocalization observed in Bi2Se3 approaching origin should be 2D electron gas resulting from split bulk state. Localization introduced by electron–electron interaction (EEI) revealed temperature dependence conductivity. enhanced contribution three-dimensional EEI electron–phonon dephasing process found increasing thickness. Considering advantage stoichiometric transfer PLD, it believed that high quality might provide more paths for doping multilayered devices.
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