作者: P. Sanchis , L. D. Sanchez , A. Griol , J. Hurtado , M. Menghini
DOI: 10.1109/ICTON.2015.7193733
关键词:
摘要: An ultra-low power 2×2 photonic switch based on VO 2 /Si technology is proposed. The structure consists of an add-drop ring resonator with a footprint below 50 µm2. waveguide fully etched silicon film top it. Electro-optical switching achieved by means the metal-insulator-transition (MIT) that can be induced in . This MIT provides ultra-large change refractive index at 1550 nm optical wavelengths yields to operation. Waveguide structures have been fabricated combination molecular beam epitaxy (MBE) growth, ex-situ annealing, e-beam lithography and lift-off. Experimental results also carried out evaluate propagation losses as well electro-optical performance.