Method of fabricating thin film transistor using buffer layer and the thin film transistor

作者: Sang Wook Lee , In Keun Woo , Jin Jang

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摘要: In the method of fabricating a thin film transistor, first aluminum layer, which is later oxidized, or nitride layer formed on glass substrate. A metal gate layer. Oxidation carried either prior to after forming gate. transistor structure that includes then over

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