Influence of temperature and oxygen on the growth of large-scale SiC nanowires
作者： Hongjiao Lin , Hejun Li , Tiyuan Wang , Qingliang Shen , Xiaohong Shi
DOI: 10.1039/C8CE01844H
关键词:
摘要: This paper examines the influence of temperature and oxygen on growth large-scale silicon carbide nanowires by using a combination sol–gel impregnation carbothermal reduction methods. To investigate process SiC nanowires, microstructural changes at different temperatures from 1050 °C to 1550 were observed SEM. In addition, XRD, TEM FTIR also used analyze nucleation, crystal structure chemical phase nanowires. XPS revealed reactions that occur during this paper, we evaluated impacts SiOC (an intermediate) The results show proper was necessary for nucleation findings indicate presence O2 could contribute longer
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