Plasma enhanced chemical vapor deposition: Differences between direct and remote plasma excitation

摘要: Films of silicon oxide, nitride, and oxynitride produced by direct plasma enhanced chemical vapor deposition (DPECVD) utilizing silane as one the gas phase reactants generally contain up to ten times more bonded hydrogen than films remote PECVD (RPECVD) deposited at same substrate temperature (Ts). We attribute this difference way is utilized in process chemistry. In DPECVD, excited along with other reactant gases, resulting formation radicals molecular fragments, e.g., SiH3 SiH2, which low temperatures (200–400 °C) serve precursors for incorporation, addition promote significant departures from insulator stoichiometry: SiO2−x, Si3N4−x, etc. contrast, RPECVD active oxygen nitrogen species (and rare‐gas diluents) are extracted a region reacted neutral form precursor Si–O Si–N bonding groups. These mo...