Structural, Optical and Morphological Properties of InxGa1-xAs Layers Obtained by RF Magnetron Sputtering

摘要: Indium gallium arsenide layers (InxGa1-xAs) were prepared on Silicon (100) and glass substrates in an argon atmosphere by R.F. magnetron sputtering. The growth temperature was 580 °C high purity targets of indium used. effects due to the RF power for In sputtering substrate type deposited films studied X-ray diffraction Raman microscopy. These studies revealed formation InxGa1-xAs with zinc-blende phase. results also show that at low power, there is a preferential along (111) direction. Morphology thickness scanning electron microscopy (SEM) atomic force (AFM), revealing variation particle size roughness. Energy dispersive spectroscopy (EDS) allowed us determine percentages In, Ga, As. are agreement measurements, where GaAs-like InAs-like LO TO vibrational modes observed shift attributed concentrations layers. By secondary ion mass (SIMS), interface quality studied. We conclude highly oriented plane obtained.