Oxidation behavior of amorphous silicon nitride nanoparticles
作者： D.H. Ma , H.J. Wang , M. Niu , J.B. Wen , H. Wei
DOI: 10.1016/J.CERAMINT.2017.10.022
关键词:
摘要: Abstract Silicon oxynitride is a promising structural/functional material for high temperature applications. can be synthesized through oxidation of amorphous silicon nitride (ASN) nanoparticles followed by crystallization process. Oxidation the ASN plays an important role during synthesis. Here we investigated its mechanism in atomic scale using experimental and modelling method. The results Nitrogen-Oxygen analyzer X-ray photoelectron spectroscopy indicate that large amount nitrogen vacancies exist ASN, thus may include vacancy ( oxygen atoms move into vacancies) replacement replace atoms). A model has been made to describe these two processes, from which activation energy (Ea) calculated 9.09 kJ/mol 118.25 kJ/mol, respectively. These values agree well with Ea well-designed experiments, confirming existence different mechanisms ASN.
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