Effect of grain size on the thermoelectric conversion efficiency of semiconductor alloys at high temperature

作者: D.M. Rowe , C.M. Bhandari

DOI: 10.1016/0306-2619(80)90008-2

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摘要: Abstract The theoretical increase in the thermoelectric figure of merit silicon-germanium alloy at 1000 K which would accompany a reduction material grain size is calculated. Assuming that acoustic phonon scattering dominant mechanism, improvement conversion efficiency compared with single crystal values estimated to be 14 per cent and 30 for n -type Si 80 Ge 20 sizes 10 μm 0·1 μm, respectively.

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