Uniaxial strain induced topological phase transition in bismuth-tellurohalide-graphene heterostructures.

摘要: We explore the electronic structure and topological phase diagram of heterostructures formed graphene ternary bismuth tellurohalide layers. show that mechanical strain inherently present in fabricated samples could induce a transition single-sided heterostructures, turning sample into novel experimental realisation time reversal invariant insulator. construct an effective tight binding description for low energy excitations fit model's parameters to ab initio band structures. propose simple approach predicting boundaries as function distortions hence gain deeper understanding on how considered system may be engineered.