作者: G. Kapur
DOI: 10.11648/J.CSSP.20120101.12
关键词:
摘要: The paper propose a modified high frequency current controlled conveyor CMOS circuit CCCII where gain, controlling intrinsic impedance and offsets are programmable independently to desired values within specific field range after fabrication with the help of floating gate transistors FGMOS. charge at floating-gate FGMOS using external voltages results in its threshold voltage variation, which turn program design (CCCII) specifications. occupies low power, about 1.509mW total power dissipation shows higher temperature stability (0.0287uA/°C variation output change). With sizing biasing condition, gain can be programmed from 0.2 2.1, 15K 51K, while offset compensated, each FGMOSFETs, respectively, 13-bit precision. However final FGMOSFETs 65µm × 54µm chip area. finds application systems field-programmability smaller sized hardware is required like universal filter, control oscillator, etc as compared circuits based FPAAs.