A plane-wave pseudopotential study on III–V zinc-blende and wurtzite semiconductors under pressure
作者： S Q Wang , H Q Ye
DOI: 10.1088/0953-8984/14/41/313
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摘要: The results of a plane-wave pseudopotential study on the mechanical and electronic properties twelve III-V zinc-blende (ZB) wurtzite (WZ) semiconductors under pressure are presented. lattice parameters, bulk moduli B-0, energy band types, band-gaps E-g(Gamma) at Gamma point, dependences investigated in detail. Our show that E-g(Gamma)-P relations can be classified into two distinct types for these ZB WZ phases. A transformation from one type E-g(Gamma)-P-relation to other is found occur some Linear relationships between inverse unit-cell volumes P = 0 also
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