Low Power Band to Band Tunnel Transistors

摘要: As scaling continues, the number of transistors per unit area and power density are both on rise. A reduction in Vdd is highly desirable to reduce consumption. For MOSFETs however, this would mean threshold voltage maintain performance thereby enhancing off current static consumption since limited a swing 60mV/decade at best. low transistor that allows 0.5V below desirable. In thesis, gate induced band-to-band tunneling explored as alternative because their potential achieve lower than turn-off. Since BTBT strongly dependant band gap semiconductor, moving from Silicon Germanium materials can help scale ,Vdd. Biaxially strained Si1-xGex based heterostructures provide ultra effective gaps. Strain used engineer complimentary with for N P type transistors. The design fabrication heterostructure tunnel below. Dopant engineering techniques enhance electric field also simulations experiments.