Enhancement of the chemical stability in confined δ-Bi2O3.

摘要: Bismuth-oxide-based materials are the building blocks for modern ferroelectrics, multiferroics, gas sensors, light photocatalysts and fuel cells. Although cubic fluorite δ-phase of bismuth oxide (δ-Bi2O3) exhibits highest conductivity known solid-state oxygen ion conductors, its instability prevents use at low temperature. Here we demonstrate possibility stabilizing δ-Bi2O3 using highly coherent interfaces alternating layers Er2O3-stabilized Gd2O3-doped CeO2. Remarkably, an exceptionally high chemical stability in reducing conditions redox cycles temperature, usually unattainable Bi2O3-based materials, is achieved. Even more interestingly, partial pressure layered material shows anomalous conductivity, equal or superior to pure air. This suggests a strategy design stabilize new that comprised intrinsically unstable but high-performing component materials.