Polymeric compound, resist material and method for forming pattern

摘要: PROBLEM TO BE SOLVED: To obtain a polymeric compound useful as base polymer for resist material suitable fine processing technology, especially chemically amplifying material, and to provide method forming pattern. SOLUTION: The contains recurring unit expressed by formulae (1-1) or (1-2) [wherein, R 1 3 are each H, F, an alkyl fluorinated alkyl; 4 is single bond, alkylene alkylene; 5 6 7 H acid-labile group; 8 (a) 2; (b) 0-4 integer; (c) 1≤a+b+c≤4] has 1,000-500,000 weight average molecular weight. provided having improved transparency, close adhesion developing liquid permeability of the resist, at same time capable becoming excellent plasma etching resistance, easily patterns pattern-forming producing super LSI (large scale integration). COPYRIGHT: (C)2004,JPO